ISC300N20NM6ATMA1 vs IQDH35N03LM5SCATMA1 Comparison
Detailed side-by-side comparison of ISC300N20NM6ATMA1 by Infineon and IQDH35N03LM5SCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC300N20NM6ATMA1
ISC300N20NM6ATMA1 - 200V 44A OptiMOS 6 N-Channel MOSFET | Infineon
ISC300N20NM6ATMA1 β ActiveInfineon
IQDH35N03LM5SCATMA1
IQDH35N03LM5SCATMA1 - 30V 700A N-Ch OptiMOS 5 MOSFET | Infineon
IQDH35N03LM5SCATMA1 β ActiveSpecification Comparison
| Parameter | ISC300N20NM6ATMA1 | IQDH35N03LM5SCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.15 | $2.05 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 200V | β |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 200 V | β |
| Continuous Drain Current (ID) at TC | 44 A | β |
| Continuous Drain Current (ID) at Ta | 6.5 A | 66 A |
| Power Dissipation (PD) at TC | 136 W | β |
| Power Dissipation (PD) at Ta | 3 W | 2.5 W |
| Drain-Source On-Resistance (RDS(on)) | 27 mΞ© (typical) | β |
| Gate Threshold Voltage (VGS(th)) | 4.5 V | β |
| Package | PG-TDSON-8 | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 6 | OptiMOS 5 (trench, shielded-gate) |
| Operating Mode | Enhancement | β |
| RoHS Status | Compliant | Compliant |
| Drain-Source Voltage (VDS) max | β | 30 V |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Pulsed Drain Current (IDM) at Tc | β | 700 A |
| On-State Resistance (RDS(on)) max | β | 0.35 mOhm @ VGS=10V |
| Power Dissipation (PD) at Tc | β | 278 W |
| Operating Temperature Range | β | -55 C to +175 C |
| MSL Level | β | 1 (unlimited) |
| Marking | β | IQDH35N03LM5S |