ISC300N20NM6ATMA1 vs IQDH35N03LM5SCATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC300N20NM6ATMA1 disebabkan oleh Infineon dan IQDH35N03LM5SCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
ISC300N20NM6ATMA1 - 200V 44A OptiMOS 6 N-Channel MOSFET | Infineon
ISC300N20NM6ATMA1 ✓ AktifInfineon
IQDH35N03LM5SCATMA1 - 30V 700A N-Ch OptiMOS 5 MOSFET | Infineon
IQDH35N03LM5SCATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | ISC300N20NM6ATMA1 | IQDH35N03LM5SCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 200V | — |
| Jenis Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at TC | 44 A | — |
| Continuous Drain Current (ID) at Ta | 6.5 A | 66 A |
| Power Dissipation (PD) at TC | 136 W | — |
| Power Dissipation (PD) at Ta | 3 W | 2.5 W |
| Drain-Source On-Resistance (RDS(on)) | 27 mΩ (typical) | — |
| Gate Threshold Voltage (VGS(th)) | 4.5 V | — |
| Kemasan | PG-TDSON-8 | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | OptiMOS 6 | OptiMOS 5 (trench, shielded-gate) |
| Operating Mode | Enhancement | — |
| Status RoHS | Compliant | Compliant |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Pulsed Drain Current (IDM) at Tc | — | 700 A |
| On-State Resistance (RDS(on)) max | — | 0.35 mOhm @ VGS=10V |
| Power Dissipation (PD) at Tc | — | 278 W |
| Gambaran Suhu Operasi | — | -55 C to +175 C |
| Aras MSL | — | 1 (unlimited) |
| Marking | — | IQDH35N03LM5S |