ISC300N20NM6ATMA1 vs IQDH35N03LM5SCATMA1 比較
詳細並排比較 ISC300N20NM6ATMA1 由 Infineon 與 IQDH35N03LM5SCATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | ISC300N20NM6ATMA1 | IQDH35N03LM5SCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 200V | — |
| 電晶體類型 | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at TC | 44 A | — |
| Continuous Drain Current (ID) at Ta | 6.5 A | 66 A |
| Power Dissipation (PD) at TC | 136 W | — |
| Power Dissipation (PD) at Ta | 3 W | 2.5 W |
| Drain-Source On-Resistance (RDS(on)) | 27 mΩ (typical) | — |
| Gate Threshold Voltage (VGS(th)) | 4.5 V | — |
| 封裝 | PG-TDSON-8 | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | OptiMOS 6 | OptiMOS 5 (trench, shielded-gate) |
| Operating Mode | Enhancement | — |
| RoHS 狀態 | Compliant | Compliant |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Pulsed Drain Current (IDM) at Tc | — | 700 A |
| On-State Resistance (RDS(on)) max | — | 0.35 mOhm @ VGS=10V |
| Power Dissipation (PD) at Tc | — | 278 W |
| 工作溫度範圍 | — | -55 C to +175 C |
| MSL 等級 | — | 1 (unlimited) |
| Marking | — | IQDH35N03LM5S |