ISZ028N03LF2SATMA1 vs ISC016N08NM8SCATMA1 Perbandingan

Perbandingan bersamaan detil ISZ028N03LF2SATMA1 dari Infineon dan ISC016N08NM8SCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISZ028N03LF2SATMA1 ISC016N08NM8SCATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Technology StrongIRFET 2 (Trench MOSFET) OptiMOS 8 (shield-gate trench)
Drain-Source Voltage (VDS) 30 V 80 V
Continuous Drain Current (ID) at Tc 128 A —
Continuous Drain Current (ID) at Ta 22 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate Threshold Voltage (VGS(th)) 2.35 V [DATA_NEEDED: VGS(th) typical/min/max]
On-Resistance (RDS(on)) max 2.8 mΩ —
Power Dissipation (Tc) 83 W —
Power Dissipation (Ta) 3 W —
Paket PG-TSDSON-8 FL (FL = flat lead) PG-WSON-8-2 (SuperSO8 DSC, 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +175C (junction, typical) -55C to +175C
Gate Drive Voltage (recommended) 10 V (logic level at 4.5 V) —
Status RoHS Compliant Compliant
Level MSL 1 1 (per JEDEC J-STD-020)
Avalanche Energy Rated Yes (single-pulse) —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] [DATA_NEEDED: typical Qg @ VGS=10V]
Manufacturer — Infineon Technologies
Product Family — OptiMOS 8
Continuous Drain Current at TA=25°C (ID) — 29 A
Continuous Drain Current at TC=25°C (ID) — 269 A
Power Dissipation at TC=25°C (PD) — 263 W
On-Resistance RDS(on) at VGS=10V — [DATA_NEEDED: RDS(on) max @ VGS=10V]
Drain Tab Connection — Top + bottom exposed (dual-side cooling)

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