ISZ028N03LF2SATMA1 vs ISC016N08NM8SCATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISZ028N03LF2SATMA1 disebabkan oleh Infineon dan ISC016N08NM8SCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISZ028N03LF2SATMA1 ISC016N08NM8SCATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Technology StrongIRFET 2 (Trench MOSFET) OptiMOS 8 (shield-gate trench)
Drain-Source Voltage (VDS) 30 V 80 V
Continuous Drain Current (ID) at Tc 128 A —
Continuous Drain Current (ID) at Ta 22 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate Threshold Voltage (VGS(th)) 2.35 V [DATA_NEEDED: VGS(th) typical/min/max]
On-Resistance (RDS(on)) max 2.8 mΩ —
Power Dissipation (Tc) 83 W —
Power Dissipation (Ta) 3 W —
Kemasan PG-TSDSON-8 FL (FL = flat lead) PG-WSON-8-2 (SuperSO8 DSC, 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +175C (junction, typical) -55C to +175C
Gate Drive Voltage (recommended) 10 V (logic level at 4.5 V) —
Status RoHS Compliant Compliant
Aras MSL 1 1 (per JEDEC J-STD-020)
Avalanche Energy Rated Yes (single-pulse) —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] [DATA_NEEDED: typical Qg @ VGS=10V]
Manufacturer — Infineon Technologies
Product Family — OptiMOS 8
Continuous Drain Current at TA=25°C (ID) — 29 A
Continuous Drain Current at TC=25°C (ID) — 269 A
Power Dissipation at TC=25°C (PD) — 263 W
On-Resistance RDS(on) at VGS=10V — [DATA_NEEDED: RDS(on) max @ VGS=10V]
Drain Tab Connection — Top + bottom exposed (dual-side cooling)

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