ISZ072N06NM6ATMA1 vs ISZ173N15NM6ATMA1 Perbandingan
Perbandingan bersamaan detil ISZ072N06NM6ATMA1 dari Infineon dan ISZ173N15NM6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | ISZ072N06NM6ATMA1 | ISZ173N15NM6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 60V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 150 V |
| Continuous Drain Current (ID, Tc=25°C) | 57 A | — |
| Continuous Drain Current (ID, Ta) | 12.7 A | — |
| RDS(on) max @ VGS=10V | 7.2 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3.3 V (typ) | — |
| Dissipasi Listrik (TC=25°C) | 50 W | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Paket | PG-TSDSON-8-34 (TSDSON-8 FL) | PG-TSDSON-8 FL |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55C to +175C ( Tj max 175C ) | — |
| Technology | OptiMOS 6 trench MOSFET | OptiMOS 6 trench-gate MOSFET |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 | — |
| Series | — | OptiMOS 6 150V |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta | — | 7.9 A |
| Continuous Drain Current (ID) at Tc | — | 48 A |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 94 W |
| Operating Mode | — | Enhancement Mode |
| Application | — | Hard and soft switching, high/low frequency |
| Lead-Free | — | Yes |
| Tape & Reel Quantity | — | 5000 |