ISZ072N06NM6ATMA1 vs ISZ173N15NM6ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISZ072N06NM6ATMA1 disebabkan oleh Infineon dan ISZ173N15NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
ISZ072N06NM6ATMA1 ISZ072N06NM6ATMA1 - 60V 57A OptiMOS 6 N-MOSFET | Infineon

ISZ072N06NM6ATMA1 - 60V 57A OptiMOS 6 N-MOSFET | Infineon

ISZ072N06NM6ATMA1 ✓ Aktif
Infineon
ISZ173N15NM6ATMA1 ISZ173N15NM6ATMA1 - 150V OptiMOS 6 N-MOSFET 48A | Infineon

ISZ173N15NM6ATMA1 - 150V OptiMOS 6 N-MOSFET 48A | Infineon

ISZ173N15NM6ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr ISZ072N06NM6ATMA1 ISZ173N15NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 6 60V —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 60 V 150 V
Continuous Drain Current (ID, Tc=25°C) 57 A —
Continuous Drain Current (ID, Ta) 12.7 A —
RDS(on) max @ VGS=10V 7.2 mΩ —
Gate Threshold Voltage (VGS(th)) 3.3 V (typ) —
Pembuangan Kuasa (TC=25°C) 50 W —
Power Dissipation (Ta) 2.5 W —
Kemasan PG-TSDSON-8-34 (TSDSON-8 FL) PG-TSDSON-8 FL
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +175C ( Tj max 175C ) —
Technology OptiMOS 6 trench MOSFET OptiMOS 6 trench-gate MOSFET
Status RoHS Compliant Compliant
Aras MSL 1 —
Series — OptiMOS 6 150V
FET Type — N-Channel
Continuous Drain Current (ID) at Ta — 7.9 A
Continuous Drain Current (ID) at Tc — 48 A
Power Dissipation (PD) at Ta — 2.5 W
Power Dissipation (PD) at Tc — 94 W
Operating Mode — Enhancement Mode
Application — Hard and soft switching, high/low frequency
Lead-Free — Yes
Tape & Reel Quantity — 5000

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