K4A4G085WG-BCWE vs MT40A512M8RH-075E:B Perbandingan
Perbandingan bersamaan detil K4A4G085WG-BCWE dari Samsung Electronics dan MT40A512M8RH-075E:B dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Micron Technology
MT40A512M8RH-075E:B - DDR4 4Gb 2666 MT/s SDRAM | Micron
MT40A512M8RH-075E:B ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K4A4G085WG-BCWE | MT40A512M8RH-075E:B |
|---|---|---|
| Merek | Samsung Electronics | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM (Volatile) | DDR4 SDRAM |
| Ukuran Memori | 4 Gb | — |
| Memory Organization | 512M x 8 | — |
| Laju Data | 3200 Mbps/pin | 2666 MT/s (DDR4-2666) |
| Speed Class | DDR4-3200 | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Technology | D-die DDR4 | — |
| Paket | FBGA-78 (BCW) | 78-FBGA (9 x 10.5 mm), TFBGA |
| Tipe Mounting | Surface Mount | Surface Mount |
| Antarmuka | Parallel (DDR4) | — |
| Burst Length | BL8 | — |
| DLL Mode | DLL Enabled (per datasheet timing) | — |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range (standard grade)] |
| Refresh | [DATA_NEEDED: refresh rate specification] | Refresh max interval extension at extended TC temperature range (125C capable per family features) |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Packaging | Tray | — |
| Density | — | 4 Gbit |
| Organisasi | — | 512M x 8 |
| Clock Frequency | — | 1333 MHz (1.33 GHz) |
| VDD Supply Voltage | — | 1.2 V +/-60 mV |
| VDDQ Supply Voltage | — | 1.2 V +/-60 mV |
| VPP Supply Voltage | — | 2.5 V, -125 mV/+250 mV |
| Tipe Antarmuka | — | Parallel |
| I/O Structure | — | 1.2V pseudo open-drain |
| Tegangan Referensi | — | On-die internal adjustable VREFDQ generation |
| Speed Grade Suffix | — | -075E |
| Packaging Option Suffix | — | :B (ball map B designation per Mouser listing) |