K4A4G165WG-BCWE vs K4A4G165WE-BCTD Perbandingan
Perbandingan bersamaan detil K4A4G165WG-BCWE dari Samsung Electronics dan K4A4G165WE-BCTD dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4A4G165WG-BCWE - 4Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4A4G165WG-BCWE ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | K4A4G165WG-BCWE | K4A4G165WE-BCTD |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $16,90 | — |
| Tipe Memori | DDR4 SDRAM (volatile DRAM) | DDR4 SDRAM (volatile DRAM) |
| Ukuran Memori | 4 Gbit | 4 Gbit |
| Memory Organization | 256M x 16 | 256M x 16 |
| Antarmuka | Parallel | Parallel, x16 |
| Laju Data | 3200 Mbps | — |
| Access Time | 19 ns | — |
| Tegangan Pemuat | 1.2 V | — |
| Suhu Kerja | 0C to +85C | 0C to +85C |
| Paket | FBGA-96 | FBGA-96 (TFBGA) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Memory Format | DRAM | — |
| Technology | DDR4 | — |
| Product Status | Active | Active |
| Status RoHS | Compliant (per JLCPCB listing) | Compliant (per JLCPCB listing) |
| Clock Frequency | [DATA_NEEDED: clock frequency / tCK range] | — |
| Latensi CAS | [DATA_NEEDED: CAS latency] | — |
| Refresh Rate | [DATA_NEEDED: refresh interval] | — |
| Supply Voltage (VDD) | — | 1.2 V (1.14 V to 1.26 V) |
| Die Generation | — | E-die |
| Terminal Count | — | 96 |
| Speed Grade | — | [DATA_NEEDED: max data rate / CAS latency for -BCTD suffix] |
| Datasheet Revision | — | K4A4G165WE Rev. 1.4, Jun. 2016 |
| Burst Length | — | BL8 (JEDEC DDR4) |
| Bank Group Architecture | — | Yes (DDR4) |