K4A4G165WG-BCWE vs K4A4G165WE-BCTD Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A4G165WG-BCWE sa pamamagitan ng Samsung Electronics at K4A4G165WE-BCTD sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A4G165WG-BCWE - 4Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4A4G165WG-BCWE ✓ NakahandaSamsung Electronics
K4A4G165WE-BCTD - 4Gb DDR4 SDRAM 256Mx16 1.2V | Samsung
K4A4G165WE-BCTD ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A4G165WG-BCWE | K4A4G165WE-BCTD |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | DRAM |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | $16.90 | — |
| Uri ng Memory | DDR4 SDRAM (volatile DRAM) | DDR4 SDRAM (volatile DRAM) |
| Laki ng Memory | 4 Gbit | 4 Gbit |
| Memory Organization | 256M x 16 | 256M x 16 |
| Interface | Parallel | Parallel, x16 |
| Rate ng Data | 3200 Mbps | — |
| Access Time | 19 ns | — |
| Volte ng Pagbibigay | 1.2 V | — |
| Temperature na Operasyon | 0C to +85C | 0C to +85C |
| Packhaging | FBGA-96 | FBGA-96 (TFBGA) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Memory Format | DRAM | — |
| Technology | DDR4 | — |
| Product Status | Active | Active |
| Tindminan RoHS | Compliant (per JLCPCB listing) | Compliant (per JLCPCB listing) |
| Clock Frequency | [DATA_NEEDED: clock frequency / tCK range] | — |
| Latensya ng CAS | [DATA_NEEDED: CAS latency] | — |
| Refresh Rate | [DATA_NEEDED: refresh interval] | — |
| Supply Voltage (VDD) | — | 1.2 V (1.14 V to 1.26 V) |
| Die Generation | — | E-die |
| Terminal Count | — | 96 |
| Speed Grade | — | [DATA_NEEDED: max data rate / CAS latency for -BCTD suffix] |
| Datasheet Revision | — | K4A4G165WE Rev. 1.4, Jun. 2016 |
| Burst Length | — | BL8 (JEDEC DDR4) |
| Bank Group Architecture | — | Yes (DDR4) |