K4A4G165WG-BCWE vs MT40A256M16LY-062E Perbandingan
Perbandingan bersamaan detil K4A4G165WG-BCWE dari Samsung Electronics dan MT40A256M16LY-062E dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4A4G165WG-BCWE - 4Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4A4G165WG-BCWE ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | K4A4G165WG-BCWE | MT40A256M16LY-062E |
|---|---|---|
| Merek | Samsung Electronics | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $16,90 | — |
| Tipe Memori | DDR4 SDRAM (volatile DRAM) | DDR4 SDRAM |
| Ukuran Memori | 4 Gbit | 4 Gbit |
| Memory Organization | 256M x 16 | — |
| Antarmuka | Parallel | Parallel |
| Laju Data | 3200 Mbps | — |
| Access Time | 19 ns | — |
| Tegangan Pemuat | 1.2 V | — |
| Suhu Kerja | 0C to +85C | — |
| Paket | FBGA-96 | 96-FBGA (7.5 x 13.5 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Memory Format | DRAM | — |
| Technology | DDR4 | — |
| Product Status | Active | — |
| Status RoHS | Compliant (per JLCPCB listing) | Compliant (F = RoHS/lead-free finish) |
| Clock Frequency | [DATA_NEEDED: clock frequency / tCK range] | 1.6 GHz |
| Latensi CAS | [DATA_NEEDED: CAS latency] | — |
| Refresh Rate | [DATA_NEEDED: refresh interval] | — |
| Organisasi | — | 256M x16 |
| Access Time (tAA) | — | 19 ns |
| Supply Voltage (VDD) | — | 1.2 V |
| Data Rate Class | — | DDR4-2666 (062E speed grade) |
| Operating Temperature (IT variant) | — | -40C to +95C |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Write Leveling | — | Yes |
| CRC (Command/Address) | — | Yes |
| Data Mask (DM) | — | Yes |
| Dynamic On-Chip Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| FBGA Code | — | D9XSG (AUT variant) |