K4A4G165WG-BCWE vs MT40A256M16LY-062E 比較
詳細並排比較 K4A4G165WG-BCWE 由 Samsung Electronics 與 MT40A256M16LY-062E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4A4G165WG-BCWE | MT40A256M16LY-062E |
|---|---|---|
| 品牌 | Samsung Electronics | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | $16.90 | — |
| 記憶體類型 | DDR4 SDRAM (volatile DRAM) | DDR4 SDRAM |
| 記憶體容量 | 4 Gbit | 4 Gbit |
| Memory Organization | 256M x 16 | — |
| 介面 | Parallel | Parallel |
| 資料速率 | 3200 Mbps | — |
| Access Time | 19 ns | — |
| 供應電壓 | 1.2 V | — |
| 工作溫度 | 0C to +85C | — |
| 封裝 | FBGA-96 | 96-FBGA (7.5 x 13.5 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| Memory Format | DRAM | — |
| Technology | DDR4 | — |
| Product Status | Active | — |
| RoHS 狀態 | Compliant (per JLCPCB listing) | Compliant (F = RoHS/lead-free finish) |
| Clock Frequency | [DATA_NEEDED: clock frequency / tCK range] | 1.6 GHz |
| CAS 延遲 | [DATA_NEEDED: CAS latency] | — |
| Refresh Rate | [DATA_NEEDED: refresh interval] | — |
| 組織 | — | 256M x16 |
| Access Time (tAA) | — | 19 ns |
| Supply Voltage (VDD) | — | 1.2 V |
| Data Rate Class | — | DDR4-2666 (062E speed grade) |
| Operating Temperature (IT variant) | — | -40C to +95C |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Write Leveling | — | Yes |
| CRC (Command/Address) | — | Yes |
| Data Mask (DM) | — | Yes |
| Dynamic On-Chip Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| FBGA Code | — | D9XSG (AUT variant) |