K4A8G085WB-BIWE vs H5AN8G6NAFR-UHC Perbandingan
Perbandingan bersamaan detil K4A8G085WB-BIWE dari Samsung Electronics dan H5AN8G6NAFR-UHC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4A8G085WB-BIWE | H5AN8G6NAFR-UHC |
|---|---|---|
| Merek | Samsung Electronics | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM (CMOS) |
| Ukuran Memori | 8 Gb | — |
| Memory Organization | 1G x 8 | — |
| Laju Data | 3200 Mbps | 2400 MT/s |
| Tegangan Pemuat | 1.2 V | 1.2 V |
| Suhu Kerja | 0°C to +85°C | 0C to +85C |
| Paket | 78-FBGA | 96-ball FBGA (TFBGA) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Memory Interface | Parallel | — |
| Access Time | [DATA_NEEDED: tRCD, tRP, tRAS] | — |
| Latensi CAS | [DATA_NEEDED: CL value] | — |
| Refresh | Auto-refresh, self-refresh | Auto self-refresh |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Lead-Free | Yes | — |
| Bebas Halogen | Yes | — |
| Memory Density | — | 8 Gbit |
| Organisasi | — | 512M x 16 |
| Clock Architecture | — | Differential clock (CK_t / CK_c), fully synchronous |
| Precharge | — | Auto precharge function |
| Reset | — | Asynchronous reset function |
| Data Mask | — | DM function supported |
| Termination | — | Dynamic on-chip termination (ODT) |
| Calibration | — | ZQ calibration function |
| Error Checking | — | CRC function |
| Write Leveling | — | Write leveling function supported |