K4A8G085WB-BIWE vs H5AN8G6NAFR-UHC Comparison
Detailed side-by-side comparison of K4A8G085WB-BIWE by Samsung Electronics and H5AN8G6NAFR-UHC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WB-BIWE
K4A8G085WB-BIWE - 8Gb DDR4 SDRAM 3200Mbps | Samsung
K4A8G085WB-BIWE β ActiveSK hynix
H5AN8G6NAFR-UHC
H5AN8G6NAFR-UHC - 8Gb DDR4 SDRAM 512Mx16 | SK hynix
H5AN8G6NAFR-UHC β ActiveSpecification Comparison
| Parameter | K4A8G085WB-BIWE | H5AN8G6NAFR-UHC |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.50 | $0.12 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gb | β |
| Memory Organization | 1G x 8 | β |
| Data Rate | 3200 Mbps | 2400 MT/s |
| Supply Voltage | 1.2 V | 1.2 V |
| Operating Temperature | 0Β°C to +85Β°C | 0Β°C to +85Β°C |
| Package | 78-FBGA | FBGA-96 |
| Mounting Type | Surface Mount | β |
| Memory Interface | Parallel | β |
| Access Time | [DATA_NEEDED: tRCD, tRP, tRAS] | β |
| CAS Latency | [DATA_NEEDED: CL value] | [DATA_NEEDED: CAS Latency] |
| Refresh | Auto-refresh, self-refresh | Auto self-refresh |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | Yes |
| Halogen-Free | Yes | Yes |
| Density | β | 8 Gb |
| Organization | β | 512M x 16 |
| Number of Terminals | β | 96 |
| Package Code | β | TFBGA |
| RoHS Compliant | β | Yes |
| Burst Length | β | 8, 4 (with burst chop) |