K4A8G085WB-BIWE vs H5AN8G6NAFR-UHC Comparison
Detailed side-by-side comparison of K4A8G085WB-BIWE by Samsung Electronics and H5AN8G6NAFR-UHC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A8G085WB-BIWE | H5AN8G6NAFR-UHC |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM (CMOS) |
| Memory Size | 8 Gb | — |
| Memory Organization | 1G x 8 | — |
| Data Rate | 3200 Mbps | 2400 MT/s |
| Supply Voltage | 1.2 V | 1.2 V |
| Operating Temperature | 0°C to +85°C | 0C to +85C |
| Package | 78-FBGA | 96-ball FBGA (TFBGA) |
| Mounting Type | Surface Mount | Surface Mount |
| Memory Interface | Parallel | — |
| Access Time | [DATA_NEEDED: tRCD, tRP, tRAS] | — |
| CAS Latency | [DATA_NEEDED: CL value] | — |
| Refresh | Auto-refresh, self-refresh | Auto self-refresh |
| RoHS Status | Compliant | [DATA_NEEDED: RoHS status] |
| Lead-Free | Yes | — |
| Halogen Free | Yes | — |
| Memory Density | — | 8 Gbit |
| Organization | — | 512M x 16 |
| Clock Architecture | — | Differential clock (CK_t / CK_c), fully synchronous |
| Precharge | — | Auto precharge function |
| Reset | — | Asynchronous reset function |
| Data Mask | — | DM function supported |
| Termination | — | Dynamic on-chip termination (ODT) |
| Calibration | — | ZQ calibration function |
| Error Checking | — | CRC function |
| Write Leveling | — | Write leveling function supported |