K4A8G165WB-BCRC vs K4A8G045WB-BCRC Perbandingan
Perbandingan bersamaan detil K4A8G165WB-BCRC dari Samsung Electronics dan K4A8G045WB-BCRC dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4A8G045WB-BCRC - 8Gb DDR4 2Gx4 2400Mbps B-die | Samsung
K4A8G045WB-BCRC ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K4A8G165WB-BCRC | K4A8G045WB-BCRC |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM (DRAM, volatile) | DDR4 SDRAM |
| Ukuran Memori | 8 Gb | — |
| Memory Organization | 512M x 16 | — |
| Antarmuka | Parallel (DDR4 SDRAM bus) | CMOS, differential clock (CK/CK#) |
| Supply Voltage (VDD) | 1.2 V | — |
| Laju Data | 2400 Mbps/pin (DDR4-2400) | — |
| Technology | CMOS, B-die 8Gb die | — |
| Paket | 96-ball FBGA (PBGA96) | 78-ball FBGA (PBGA78) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | -40C to +95C | 0 C to 85 C |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC / CA Parity | CRC function supported | — |
| On-Chip Termination | Dynamic ODT | — |
| ZQ Calibration | Yes | — |
| Clock Frequency | 1200 MHz (DDR4-2400) | — |
| Density | — | 8 Gb |
| Organisasi | — | 2G x 4 |
| Speed | — | 2400 Mbps |
| Supply Voltage (VDD/VDDQ) | — | 1.2 V |
| Process Technology | — | Samsung B-die |
| Refresh Cycles | — | 8192 |
| Maximum Supply Current | — | 211.7 mA |
| Terminals | — | 78 |
| Key DDR4 Features | — | Posted CAS, Programmable CWL, Internal (Self) Calibration, ODT, Asynchronous Reset |
| DLL Mode | — | Timing specified for DLL-enabled operation |
| Status RoHS | — | Compliant |