K4A8G165WB-BCRC vs K4A8G045WB-BCRC 比較
詳細並排比較 K4A8G165WB-BCRC 由 Samsung Electronics 與 K4A8G045WB-BCRC 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4A8G165WB-BCRC | K4A8G045WB-BCRC |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM (DRAM, volatile) | DDR4 SDRAM |
| 記憶體容量 | 8 Gb | — |
| Memory Organization | 512M x 16 | — |
| 介面 | Parallel (DDR4 SDRAM bus) | CMOS, differential clock (CK/CK#) |
| Supply Voltage (VDD) | 1.2 V | — |
| 資料速率 | 2400 Mbps/pin (DDR4-2400) | — |
| Technology | CMOS, B-die 8Gb die | — |
| 封裝 | 96-ball FBGA (PBGA96) | 78-ball FBGA (PBGA78) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | -40C to +95C | 0 C to 85 C |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC / CA Parity | CRC function supported | — |
| On-Chip Termination | Dynamic ODT | — |
| ZQ Calibration | Yes | — |
| Clock Frequency | 1200 MHz (DDR4-2400) | — |
| Density | — | 8 Gb |
| 組織 | — | 2G x 4 |
| Speed | — | 2400 Mbps |
| Supply Voltage (VDD/VDDQ) | — | 1.2 V |
| Process Technology | — | Samsung B-die |
| Refresh Cycles | — | 8192 |
| Maximum Supply Current | — | 211.7 mA |
| Terminals | — | 78 |
| Key DDR4 Features | — | Posted CAS, Programmable CWL, Internal (Self) Calibration, ODT, Asynchronous Reset |
| DLL Mode | — | Timing specified for DLL-enabled operation |
| RoHS 狀態 | — | Compliant |