K4A8G165WC-BCRC vs H5AN8G6NDJR-XNC Perbandingan
Perbandingan bersamaan detil K4A8G165WC-BCRC dari Samsung Electro-Mechanics dan H5AN8G6NDJR-XNC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electro-Mechanics
K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WC-BCRC ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | K4A8G165WC-BCRC | H5AN8G6NDJR-XNC |
|---|---|---|
| Merek | Samsung Electro-Mechanics | SK hynix |
| Kategori | EEPROM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | In Stock | — |
| Harga Unit (USD) | $19,69 | $55,68 |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Ukuran Memori | 8 Gbit | 8 Gb |
| Organisasi | 512M x 16 | — |
| Laju Data | 2400 Mbps | 3200 Mbps |
| Clock Frequency | 1333 MHz | — |
| Tegangan Pemuat | 1.2 V (1.14 V to 1.26 V) | — |
| Antarmuka | Parallel, 16-bit DDR | — |
| Standby Current (Idle) | 2 mA | — |
| Operating Current | 64 mA | — |
| Suhu Kerja | 0 C to +95 C | — |
| Paket | 96-FBGA (TFBGA) | FBGA-96 (13x7.5 mm) |
| Tipe Mounting | Surface Mount | — |
| Fitur | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask | — |
| Die Generation | C-die | — |
| Memory Format | DRAM | — |
| Status RoHS | Compliant | — |
| Memory Organization | — | 512M x16 |
| Supply Voltage (VDD) | — | 1.2 V (max 1.26 V) |
| Number of Terminals | — | 96 |
| Maximum Operating Temperature | — | 85 °C |
| Input/Output Type | — | COMMON |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Bebas Halogen | — | Yes |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Data Mask | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |
| CRC Function | — | Yes |
| Write Leveling | — | Yes |
| Asynchronous Reset | — | Yes |