K4A8G165WC-BCRC vs H5AN8G6NDJR-XNC Comparison
Detailed side-by-side comparison of K4A8G165WC-BCRC by Samsung Electro-Mechanics and H5AN8G6NDJR-XNC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electro-Mechanics
K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WC-BCRC ✓ Active
Specification Comparison
| Parameter | K4A8G165WC-BCRC | H5AN8G6NDJR-XNC |
|---|---|---|
| Brand | Samsung Electro-Mechanics | SK hynix |
| Category | EEPROM | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | — |
| Unit Price (USD) | $19.69 | $55.68 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gbit | 8 Gb |
| Organization | 512M x 16 | — |
| Data Rate | 2400 Mbps | 3200 Mbps |
| Clock Frequency | 1333 MHz | — |
| Supply Voltage | 1.2 V (1.14 V to 1.26 V) | — |
| Interface | Parallel, 16-bit DDR | — |
| Standby Current (Idle) | 2 mA | — |
| Operating Current | 64 mA | — |
| Operating Temperature | 0 C to +95 C | — |
| Package | 96-FBGA (TFBGA) | FBGA-96 (13x7.5 mm) |
| Mounting Type | Surface Mount | — |
| Features | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask | — |
| Die Generation | C-die | — |
| Memory Format | DRAM | — |
| RoHS Status | Compliant | — |
| Memory Organization | — | 512M x16 |
| Supply Voltage (VDD) | — | 1.2 V (max 1.26 V) |
| Number of Terminals | — | 96 |
| Maximum Operating Temperature | — | 85 °C |
| Input/Output Type | — | COMMON |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Halogen Free | — | Yes |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Data Mask | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |
| CRC Function | — | Yes |
| Write Leveling | — | Yes |
| Asynchronous Reset | — | Yes |