K4A8G165WC-BCRC vs H5AN8G6NDJR-XNC Comparison
Detailed side-by-side comparison of K4A8G165WC-BCRC by Samsung Electronics and H5AN8G6NDJR-XNC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WC-BCRC
K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps | Samsung
K4A8G165WC-BCRC β Active
Specification Comparison
| Parameter | K4A8G165WC-BCRC | H5AN8G6NDJR-XNC |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $23.00 | $55.68 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | β |
| Organization | 512M x 16 | β |
| Data Rate | 2400 Mbps | 3200 Mbps |
| Supply Voltage (VDD) | 1.2 V (1.14V to 1.26V) | 1.2 V (max 1.26 V) |
| VPP Voltage | 2.5 V | β |
| Operating Temperature | 0Β°C to +95Β°C (case) | β |
| Package | 96-ball FBGA (9mm x 13mm) | FBGA-96 (13x7.5 mm) |
| Interface | 16-bit I/O | β |
| Banks | 16 (4 bank groups) | β |
| Burst Length | 8 (BL8) | β |
| CAS Latency | Programmable (e.g., 16, 17, 18) | β |
| Refresh | Temperature-compensated self-refresh (TCSR) | β |
| RoHS | Compliant | Compliant |
| Mounting Type | Surface Mount | β |
| Memory Size | β | 8 Gb |
| Memory Organization | β | 512M x16 |
| Number of Terminals | β | 96 |
| Maximum Operating Temperature | β | 85 Β°C |
| Input/Output Type | β | COMMON |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes |
| Auto Self-Refresh | β | Yes |
| Auto Precharge | β | Yes |
| Data Mask | β | Yes |
| Dynamic On-Chip Termination | β | Yes |
| ZQ Calibration | β | Yes |
| CRC Function | β | Yes |
| Write Leveling | β | Yes |
| Asynchronous Reset | β | Yes |