K4A8G165WC-BCRC vs H5AN8G6NDJR-XNC 比較
詳細並排比較 K4A8G165WC-BCRC 由 Samsung Electro-Mechanics 與 H5AN8G6NDJR-XNC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electro-Mechanics
K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WC-BCRC ✓ 啟用中
規格比較
| 參數 | K4A8G165WC-BCRC | H5AN8G6NDJR-XNC |
|---|---|---|
| 品牌 | Samsung Electro-Mechanics | SK hynix |
| 類別 | EEPROM | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 庫存狀態 | In Stock | — |
| 單價 (USD) | $19.69 | $55.68 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| 記憶體容量 | 8 Gbit | 8 Gb |
| 組織 | 512M x 16 | — |
| 資料速率 | 2400 Mbps | 3200 Mbps |
| Clock Frequency | 1333 MHz | — |
| 供應電壓 | 1.2 V (1.14 V to 1.26 V) | — |
| 介面 | Parallel, 16-bit DDR | — |
| Standby Current (Idle) | 2 mA | — |
| Operating Current | 64 mA | — |
| 工作溫度 | 0 C to +95 C | — |
| 封裝 | 96-FBGA (TFBGA) | FBGA-96 (13x7.5 mm) |
| 安裝類型 | Surface Mount | — |
| 功能特色 | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask | — |
| Die Generation | C-die | — |
| Memory Format | DRAM | — |
| RoHS 狀態 | Compliant | — |
| Memory Organization | — | 512M x16 |
| Supply Voltage (VDD) | — | 1.2 V (max 1.26 V) |
| Number of Terminals | — | 96 |
| Maximum Operating Temperature | — | 85 °C |
| Input/Output Type | — | COMMON |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |
| 無鹵素 | — | Yes |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Data Mask | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |
| CRC Function | — | Yes |
| Write Leveling | — | Yes |
| Asynchronous Reset | — | Yes |