K4A8G165WC-BCRC vs H5AN8G6NDJR-XNC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G165WC-BCRC disebabkan oleh Samsung Electro-Mechanics dan H5AN8G6NDJR-XNC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electro-Mechanics
K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WC-BCRC ✓ Aktif
Pengandingan Spesifikasi
| Parametr | K4A8G165WC-BCRC | H5AN8G6NDJR-XNC |
|---|---|---|
| Merek | Samsung Electro-Mechanics | SK hynix |
| Kategori | EEPROM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | In Stock | — |
| Harga Unit (USD) | $19.69 | $55.68 |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 8 Gbit | 8 Gb |
| Organisasi | 512M x 16 | — |
| Kadar Data | 2400 Mbps | 3200 Mbps |
| Clock Frequency | 1333 MHz | — |
| Tegangan Pemberi Arus | 1.2 V (1.14 V to 1.26 V) | — |
| Antaramuka | Parallel, 16-bit DDR | — |
| Standby Current (Idle) | 2 mA | — |
| Operating Current | 64 mA | — |
| Suhu Operasi | 0 C to +95 C | — |
| Kemasan | 96-FBGA (TFBGA) | FBGA-96 (13x7.5 mm) |
| Jenis Pemasangan | Surface Mount | — |
| Ciri-ciri | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask | — |
| Die Generation | C-die | — |
| Memory Format | DRAM | — |
| Status RoHS | Compliant | — |
| Memory Organization | — | 512M x16 |
| Supply Voltage (VDD) | — | 1.2 V (max 1.26 V) |
| Number of Terminals | — | 96 |
| Maximum Operating Temperature | — | 85 °C |
| Input/Output Type | — | COMMON |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Boson Bebas | — | Yes |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Data Mask | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |
| CRC Function | — | Yes |
| Write Leveling | — | Yes |
| Asynchronous Reset | — | Yes |