K4A8G165WC-BCRC vs K4A8G165WC-BCTD Perbandingan
Perbandingan bersamaan detil K4A8G165WC-BCRC dari Samsung Electro-Mechanics dan K4A8G165WC-BCTD dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electro-Mechanics
K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WC-BCRC ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | K4A8G165WC-BCRC | K4A8G165WC-BCTD |
|---|---|---|
| Merek | Samsung Electro-Mechanics | Samsung Electronics |
| Kategori | EEPROM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | In Stock | — |
| Harga Unit (USD) | $19,69 | — |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Ukuran Memori | 8 Gbit | — |
| Organisasi | 512M x 16 | 512M x16 |
| Laju Data | 2400 Mbps | 2666 Mbps (DDR4-2666) |
| Clock Frequency | 1333 MHz | 1.333 GHz |
| Tegangan Pemuat | 1.2 V (1.14 V to 1.26 V) | — |
| Antarmuka | Parallel, 16-bit DDR | — |
| Standby Current (Idle) | 2 mA | — |
| Operating Current | 64 mA | — |
| Suhu Kerja | 0 C to +95 C | 0C to +95C |
| Paket | 96-FBGA (TFBGA) | 96FBGA |
| Tipe Mounting | Surface Mount | Surface Mount |
| Fitur | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask | — |
| Die Generation | C-die | C-die (1Y nm-class process) |
| Memory Format | DRAM | — |
| Status RoHS | Compliant | Compliant |
| Density | — | 8 Gb |
| Supply Voltage (VDD) | — | 1.2 V |
| Operating Voltage Range | — | 1.14 V to 1.26 V |
| CRC Function | — | Yes (write CRC) |
| ZQ Calibration | — | Yes |
| On-Die Termination | — | Dynamic ODT |
| Data Mask | — | Yes (x16 DM) |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |