K4A8G165WC-BCRC vs K4A8G165WC-BCTD 比較
詳細並排比較 K4A8G165WC-BCRC 由 Samsung Electro-Mechanics 與 K4A8G165WC-BCTD 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electro-Mechanics
K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WC-BCRC ✓ 啟用中
規格比較
| 參數 | K4A8G165WC-BCRC | K4A8G165WC-BCTD |
|---|---|---|
| 品牌 | Samsung Electro-Mechanics | Samsung Electronics |
| 類別 | EEPROM | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 庫存狀態 | In Stock | — |
| 單價 (USD) | $19.69 | — |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| 記憶體容量 | 8 Gbit | — |
| 組織 | 512M x 16 | 512M x16 |
| 資料速率 | 2400 Mbps | 2666 Mbps (DDR4-2666) |
| Clock Frequency | 1333 MHz | 1.333 GHz |
| 供應電壓 | 1.2 V (1.14 V to 1.26 V) | — |
| 介面 | Parallel, 16-bit DDR | — |
| Standby Current (Idle) | 2 mA | — |
| Operating Current | 64 mA | — |
| 工作溫度 | 0 C to +95 C | 0C to +95C |
| 封裝 | 96-FBGA (TFBGA) | 96FBGA |
| 安裝類型 | Surface Mount | Surface Mount |
| 功能特色 | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask | — |
| Die Generation | C-die | C-die (1Y nm-class process) |
| Memory Format | DRAM | — |
| RoHS 狀態 | Compliant | Compliant |
| Density | — | 8 Gb |
| Supply Voltage (VDD) | — | 1.2 V |
| Operating Voltage Range | — | 1.14 V to 1.26 V |
| CRC Function | — | Yes (write CRC) |
| ZQ Calibration | — | Yes |
| On-Die Termination | — | Dynamic ODT |
| Data Mask | — | Yes (x16 DM) |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |