K4A8G165WC-BCRC vs K4A8G165WC-BCTD Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G165WC-BCRC sa pamamagitan ng Samsung Electro-Mechanics at K4A8G165WC-BCTD sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electro-Mechanics
K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WC-BCRC ✓ NakahandaSamsung Electronics
K4A8G165WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps x16 | Samsung
K4A8G165WC-BCTD ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A8G165WC-BCRC | K4A8G165WC-BCTD |
|---|---|---|
| Brand | Samsung Electro-Mechanics | Samsung Electronics |
| Kategorya | EEPROM | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | In Stock | — |
| Presyo ng Yunit (USD) | $19.69 | — |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Laki ng Memory | 8 Gbit | — |
| Organisasyon | 512M x 16 | 512M x16 |
| Rate ng Data | 2400 Mbps | 2666 Mbps (DDR4-2666) |
| Clock Frequency | 1333 MHz | 1.333 GHz |
| Volte ng Pagbibigay | 1.2 V (1.14 V to 1.26 V) | — |
| Interface | Parallel, 16-bit DDR | — |
| Standby Current (Idle) | 2 mA | — |
| Operating Current | 64 mA | — |
| Temperature na Operasyon | 0 C to +95 C | 0C to +95C |
| Packhaging | 96-FBGA (TFBGA) | 96FBGA |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Mga Karakteristika | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask | — |
| Die Generation | C-die | C-die (1Y nm-class process) |
| Memory Format | DRAM | — |
| Tindminan RoHS | Compliant | Compliant |
| Density | — | 8 Gb |
| Supply Voltage (VDD) | — | 1.2 V |
| Operating Voltage Range | — | 1.14 V to 1.26 V |
| CRC Function | — | Yes (write CRC) |
| ZQ Calibration | — | Yes |
| On-Die Termination | — | Dynamic ODT |
| Data Mask | — | Yes (x16 DM) |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |