K4A8G165WC-BCRC vs K4A8G165WC-BCTD Comparison
Detailed side-by-side comparison of K4A8G165WC-BCRC by Samsung Electro-Mechanics and K4A8G165WC-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electro-Mechanics
K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WC-BCRC ✓ ActiveSamsung Electronics
K4A8G165WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps x16 | Samsung
K4A8G165WC-BCTD ✓ ActiveSpecification Comparison
| Parameter | K4A8G165WC-BCRC | K4A8G165WC-BCTD |
|---|---|---|
| Brand | Samsung Electro-Mechanics | Samsung Electronics |
| Category | EEPROM | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | — |
| Unit Price (USD) | $19.69 | — |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gbit | — |
| Organization | 512M x 16 | 512M x16 |
| Data Rate | 2400 Mbps | 2666 Mbps (DDR4-2666) |
| Clock Frequency | 1333 MHz | 1.333 GHz |
| Supply Voltage | 1.2 V (1.14 V to 1.26 V) | — |
| Interface | Parallel, 16-bit DDR | — |
| Standby Current (Idle) | 2 mA | — |
| Operating Current | 64 mA | — |
| Operating Temperature | 0 C to +95 C | 0C to +95C |
| Package | 96-FBGA (TFBGA) | 96FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Features | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask | — |
| Die Generation | C-die | C-die (1Y nm-class process) |
| Memory Format | DRAM | — |
| RoHS Status | Compliant | Compliant |
| Density | — | 8 Gb |
| Supply Voltage (VDD) | — | 1.2 V |
| Operating Voltage Range | — | 1.14 V to 1.26 V |
| CRC Function | — | Yes (write CRC) |
| ZQ Calibration | — | Yes |
| On-Die Termination | — | Dynamic ODT |
| Data Mask | — | Yes (x16 DM) |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |