K4B4G1646D-BCMA0 vs K4B4G1646 Perbandingan
Perbandingan bersamaan detil K4B4G1646D-BCMA0 dari Samsung Electronics dan K4B4G1646 dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4B4G1646D-BCMA0 - 4Gb DDR3 SDRAM 256Mx16 | Samsung
K4B4G1646D-BCMA0 ✗ Akhir HidupPerbandingan Spesifikasi
| Parameter Umum | K4B4G1646D-BCMA0 | K4B4G1646 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Akhir Hidup | Aktif |
| Tipe Memori | DDR3 SDRAM | DDR3 SDRAM |
| Ukuran Memori | 4 Gb | 4 Gbit |
| Organisasi | 256M x 16 | 256M x 16 |
| Laju Data | 1866 Mbps | — |
| Tegangan Pemuat | 1.5 V | 1.5 V (DDR3L variants 1.35 V) |
| Suhu Kerja | 0°C to 85°C | 0C to +95C |
| Paket | 96-FBGA | 96-FBGA |
| Tipe Mounting | Surface Mount | Surface Mount |
| Memory Interface | Parallel | — |
| RoHS | Compliant | — |
| Bebas Halogen | Yes | — |
| Lead Free | Yes | — |
| Status Lingkungan Hidup | EOL | — |
| Technology | DDR3 | — |
| Number of Terminals | 96 | — |
| Antarmuka | — | Parallel |
| Max Data Rate | — | Up to 2133 Mbps (grade dependent) |
| Clock Frequency Range | — | 800 MHz to 2133 Mbps (grade dependent) |
| On-Chip Termination (ODT) | — | Dynamic ODT |
| ZQ Calibration | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask Function | — | Yes |
| Die Revisions | — | B-die, D-die, Q-die (DDR3L) |
| Status RoHS | — | [DATA_NEEDED: RoHS status] |
| Level MSL | — | [DATA_NEEDED: moisture sensitivity level] |