K4B4G1646D-BCMA0 vs K4B4G1646 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4B4G1646D-BCMA0 disebabkan oleh Samsung Electronics dan K4B4G1646 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4B4G1646D-BCMA0 - 4Gb DDR3 SDRAM 256Mx16 | Samsung
K4B4G1646D-BCMA0 ✗ Akhir HayatPengandingan Spesifikasi
| Parametr | K4B4G1646D-BCMA0 | K4B4G1646 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Akhir Hidup | Aktif |
| Jenis Ingatan | DDR3 SDRAM | DDR3 SDRAM |
| Saiz Ingatan | 4 Gb | 4 Gbit |
| Organisasi | 256M x 16 | 256M x 16 |
| Kadar Data | 1866 Mbps | — |
| Tegangan Pemberi Arus | 1.5 V | 1.5 V (DDR3L variants 1.35 V) |
| Suhu Operasi | 0°C to 85°C | 0C to +95C |
| Kemasan | 96-FBGA | 96-FBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Memory Interface | Parallel | — |
| RoHS | Compliant | — |
| Boson Bebas | Yes | — |
| Lead Free | Yes | — |
| Status Lingkungan Hidup | EOL | — |
| Technology | DDR3 | — |
| Number of Terminals | 96 | — |
| Antaramuka | — | Parallel |
| Max Data Rate | — | Up to 2133 Mbps (grade dependent) |
| Clock Frequency Range | — | 800 MHz to 2133 Mbps (grade dependent) |
| On-Chip Termination (ODT) | — | Dynamic ODT |
| ZQ Calibration | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask Function | — | Yes |
| Die Revisions | — | B-die, D-die, Q-die (DDR3L) |
| Status RoHS | — | [DATA_NEEDED: RoHS status] |
| Aras MSL | — | [DATA_NEEDED: moisture sensitivity level] |