K4B4G1646D-BYK00 vs H5TC4G63AFR-G7A Perbandingan
Perbandingan bersamaan detil K4B4G1646D-BYK00 dari Samsung Electronics dan H5TC4G63AFR-G7A dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4B4G1646D-BYK00 - 4Gb DDR3L SDRAM 256Mx16 96FBGA | Samsung
K4B4G1646D-BYK00 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K4B4G1646D-BYK00 | H5TC4G63AFR-G7A |
|---|---|---|
| Merek | Samsung Electronics | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4Gb |
| Organisasi | 256M x 16 | 256M x 16 |
| Laju Data | 1600 Mbps | 1600 Mbps (PC3-12800) |
| Tegangan Pemuat | 1.35 V (also operates at 1.5 V) | 1.35V |
| Paket | 96-ball TFBGA | 96-ball FBGA |
| Number of Terminals | 96 | — |
| Suhu Kerja | 0°C to 85°C | 0°C to 95°C (case) |
| Latensi CAS | Programmable | Programmable (e.g., 11) |
| Additional Features | Auto precharge, asynchronous reset, ZQ calibration, data mask, dynamic on-chip termination | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Bebas Halogen | Yes | Yes |
| Package Shape | RECTANGULAR | — |
| Temperature Grade | OTHER | — |
| Burst Length | — | 8 and 4 |
| Refresh Period | — | 7.8us at 85°C |
| On-Die Termination | — | Supported |
| Process Technology | — | CMOS |