M29F160FB55N3F2 vs M29F200FB55N3F2 Perbandingan
Perbandingan bersamaan detil M29F160FB55N3F2 dari Micron Technology dan M29F200FB55N3F2 dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Micron Technology
M29F200FB55N3F2 - 2Mbit 5V NOR Flash 55ns 48-TSOP | Micron
M29F200FB55N3F2 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | M29F160FB55N3F2 | M29F200FB55N3F2 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Obsolete | Aktif |
| Tipe Memori | Parallel NOR Flash | Parallel NOR Flash |
| Density | 16777 kbits (16 Mbit) | 2 Mbit (2097 kbits) |
| Organisasi | 1 Mword x 16 bits / 2 Mbyte x 8 bits | 256K x 8 bit / 128K x 16 bit |
| Number of Words | 1000 k | 128 K (x16 mode) |
| Bits per Word | 16 bits | 16 bits |
| Access Time | 55 ns | 55 ns |
| Tegangan Pemuat | 5 V | — |
| Boot Block Architecture | Bottom Boot Block | Bottom Boot Block (FB) |
| Suhu Kerja | -40 to +125 C | -40C to +125C |
| Antarmuka | Parallel | Parallel |
| Package Type | 48-TSOP | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Termination Finish | Lead-free (F2 suffix) | — |
| Program/Erase Controller | Embedded byte/word program algorithms | — |
| Block Protection | Hardware boot block protection | — |
| Status RoHS | Compliant (lead-free) | [DATA_NEEDED: RoHS compliance status] |
| Speed Grade (from MPN) | 55 (55 ns) | — |
| Supply Voltage (VCC) | — | 5 V |
| Programming | — | Embedded byte/word program algorithm |
| Erase | — | Embedded block erase controller |
| Paket | — | 48-TSOP I |
| Packaging | — | Tape & Reel (TR) |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |