M29F160FB55N3F2 vs M29F200FB55N3F2 比較
詳細並排比較 M29F160FB55N3F2 由 Micron Technology 與 M29F200FB55N3F2 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | M29F160FB55N3F2 | M29F200FB55N3F2 |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | Obsolete | 啟用中 |
| 記憶體類型 | Parallel NOR Flash | Parallel NOR Flash |
| Density | 16777 kbits (16 Mbit) | 2 Mbit (2097 kbits) |
| 組織 | 1 Mword x 16 bits / 2 Mbyte x 8 bits | 256K x 8 bit / 128K x 16 bit |
| Number of Words | 1000 k | 128 K (x16 mode) |
| Bits per Word | 16 bits | 16 bits |
| Access Time | 55 ns | 55 ns |
| 供應電壓 | 5 V | — |
| Boot Block Architecture | Bottom Boot Block | Bottom Boot Block (FB) |
| 工作溫度 | -40 to +125 C | -40C to +125C |
| 介面 | Parallel | Parallel |
| Package Type | 48-TSOP | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Termination Finish | Lead-free (F2 suffix) | — |
| Program/Erase Controller | Embedded byte/word program algorithms | — |
| Block Protection | Hardware boot block protection | — |
| RoHS 狀態 | Compliant (lead-free) | [DATA_NEEDED: RoHS compliance status] |
| Speed Grade (from MPN) | 55 (55 ns) | — |
| Supply Voltage (VCC) | — | 5 V |
| Programming | — | Embedded byte/word program algorithm |
| Erase | — | Embedded block erase controller |
| 封裝 | — | 48-TSOP I |
| Packaging | — | Tape & Reel (TR) |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |