M29F160FB55N3F2 vs M29F200FB55N3F2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29F160FB55N3F2 disebabkan oleh Micron Technology dan M29F200FB55N3F2 disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
M29F200FB55N3F2 - 2Mbit 5V NOR Flash 55ns 48-TSOP | Micron
M29F200FB55N3F2 ✓ AktifPengandingan Spesifikasi
| Parametr | M29F160FB55N3F2 | M29F200FB55N3F2 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Obsolete | Aktif |
| Jenis Ingatan | Parallel NOR Flash | Parallel NOR Flash |
| Density | 16777 kbits (16 Mbit) | 2 Mbit (2097 kbits) |
| Organisasi | 1 Mword x 16 bits / 2 Mbyte x 8 bits | 256K x 8 bit / 128K x 16 bit |
| Number of Words | 1000 k | 128 K (x16 mode) |
| Bits per Word | 16 bits | 16 bits |
| Access Time | 55 ns | 55 ns |
| Tegangan Pemberi Arus | 5 V | — |
| Boot Block Architecture | Bottom Boot Block | Bottom Boot Block (FB) |
| Suhu Operasi | -40 to +125 C | -40C to +125C |
| Antaramuka | Parallel | Parallel |
| Package Type | 48-TSOP | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Termination Finish | Lead-free (F2 suffix) | — |
| Program/Erase Controller | Embedded byte/word program algorithms | — |
| Block Protection | Hardware boot block protection | — |
| Status RoHS | Compliant (lead-free) | [DATA_NEEDED: RoHS compliance status] |
| Speed Grade (from MPN) | 55 (55 ns) | — |
| Supply Voltage (VCC) | — | 5 V |
| Programming | — | Embedded byte/word program algorithm |
| Erase | — | Embedded block erase controller |
| Kemasan | — | 48-TSOP I |
| Packaging | — | Tape & Reel (TR) |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |