M29F160FT55N3E2 vs M29F160FB55N3E2 Perbandingan
Perbandingan bersamaan detil M29F160FT55N3E2 dari Micron Technology dan M29F160FB55N3E2 dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Micron Technology
M29F160FT55N3E2 - 16Mbit 55ns 5V NOR Flash | Micron | TSOP-48
M29F160FT55N3E2 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | M29F160FT55N3E2 | M29F160FB55N3E2 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | NOR Flash | NOR Flash - Parallel, Asynchronous |
| Memory Organization | 16 Mbit (1 M x 16 / 2 M x 8) | — |
| Density | 16777 kbits | 16777 kbits (16 Mbit) |
| Number of Words | 1000 k | 1000 k |
| Bits per Word | 16 bits | 16 bits |
| Access Time | 55 ns | 55 ns |
| Tegangan Pemuat | 5 V | — |
| Antarmuka | Parallel | Parallel |
| Boot Block | Top Boot Block | Bottom Boot Block (FB) |
| Suhu Kerja | -40C to +125C | -40 C to +125 C |
| Temperature Grade | Automotive Grade 3 | — |
| Paket | 48-TSOP I | 48-TSOP I |
| Tipe Mounting | Surface Mount | Surface Mount |
| Bus Width | 8-bit / 16-bit selectable (BYTE# pin) | — |
| Program/Erase | Embedded program/erase controller (byte/word algorithms) | — |
| Factory Erase State | All bits erased to 1 | — |
| Status RoHS | Compliant (E suffix) | ROHS3 Compliant |
| Organisasi | — | 1 M x 16 / 2 M x 8 |
| Supply Voltage (VCC) | — | 5 V |
| Programming Algorithm | — | Embedded byte/word program and erase controller |
| Packaging | — | Tray |
| Lead Free Status | — | Lead Free |