M29F160FT55N3E2 vs M29F160FB55N3E2 比較
詳細並排比較 M29F160FT55N3E2 由 Micron Technology 與 M29F160FB55N3E2 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Micron Technology
M29F160FT55N3E2 - 16Mbit 55ns 5V NOR Flash | Micron | TSOP-48
M29F160FT55N3E2 ✓ 啟用中規格比較
| 參數 | M29F160FT55N3E2 | M29F160FB55N3E2 |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | NOR Flash | NOR Flash - Parallel, Asynchronous |
| Memory Organization | 16 Mbit (1 M x 16 / 2 M x 8) | — |
| Density | 16777 kbits | 16777 kbits (16 Mbit) |
| Number of Words | 1000 k | 1000 k |
| Bits per Word | 16 bits | 16 bits |
| Access Time | 55 ns | 55 ns |
| 供應電壓 | 5 V | — |
| 介面 | Parallel | Parallel |
| Boot Block | Top Boot Block | Bottom Boot Block (FB) |
| 工作溫度 | -40C to +125C | -40 C to +125 C |
| Temperature Grade | Automotive Grade 3 | — |
| 封裝 | 48-TSOP I | 48-TSOP I |
| 安裝類型 | Surface Mount | Surface Mount |
| Bus Width | 8-bit / 16-bit selectable (BYTE# pin) | — |
| Program/Erase | Embedded program/erase controller (byte/word algorithms) | — |
| Factory Erase State | All bits erased to 1 | — |
| RoHS 狀態 | Compliant (E suffix) | ROHS3 Compliant |
| 組織 | — | 1 M x 16 / 2 M x 8 |
| Supply Voltage (VCC) | — | 5 V |
| Programming Algorithm | — | Embedded byte/word program and erase controller |
| Packaging | — | Tray |
| Lead Free Status | — | Lead Free |