M29F160FT55N3E2 vs M29F160FB55N3E2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29F160FT55N3E2 disebabkan oleh Micron Technology dan M29F160FB55N3E2 disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
M29F160FT55N3E2 - 16Mbit 55ns 5V NOR Flash | Micron | TSOP-48
M29F160FT55N3E2 ✓ AktifPengandingan Spesifikasi
| Parametr | M29F160FT55N3E2 | M29F160FB55N3E2 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | NOR Flash | NOR Flash - Parallel, Asynchronous |
| Memory Organization | 16 Mbit (1 M x 16 / 2 M x 8) | — |
| Density | 16777 kbits | 16777 kbits (16 Mbit) |
| Number of Words | 1000 k | 1000 k |
| Bits per Word | 16 bits | 16 bits |
| Access Time | 55 ns | 55 ns |
| Tegangan Pemberi Arus | 5 V | — |
| Antaramuka | Parallel | Parallel |
| Boot Block | Top Boot Block | Bottom Boot Block (FB) |
| Suhu Operasi | -40C to +125C | -40 C to +125 C |
| Temperature Grade | Automotive Grade 3 | — |
| Kemasan | 48-TSOP I | 48-TSOP I |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Bus Width | 8-bit / 16-bit selectable (BYTE# pin) | — |
| Program/Erase | Embedded program/erase controller (byte/word algorithms) | — |
| Factory Erase State | All bits erased to 1 | — |
| Status RoHS | Compliant (E suffix) | ROHS3 Compliant |
| Organisasi | — | 1 M x 16 / 2 M x 8 |
| Supply Voltage (VCC) | — | 5 V |
| Programming Algorithm | — | Embedded byte/word program and erase controller |
| Packaging | — | Tray |
| Lead Free Status | — | Lead Free |