M29F160FT55N3F2 vs M29F160FB55N3E2 Perbandingan

Perbandingan bersamaan detil M29F160FT55N3F2 dari Micron Technology dan M29F160FB55N3E2 dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Micron Technology
M29F160FT55N3F2 M29F160FT55N3F2 - 16Mbit 5V 55ns NOR Flash | Micron Technology

M29F160FT55N3F2 - 16Mbit 5V 55ns NOR Flash | Micron Technology

M29F160FT55N3F2 ✓ Aktif
Micron Technology
M29F160FB55N3E2 M29F160FB55N3E2 - 16Mbit 55ns 5V NOR Flash | Micron

M29F160FB55N3E2 - 16Mbit 55ns 5V NOR Flash | Micron

M29F160FB55N3E2 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum M29F160FT55N3F2 M29F160FB55N3E2
Merek Micron Technology Micron Technology
Kategori Flash Memory ICs
Status Lingkungan Hidup Aktif Aktif
Tipe Memori NOR Flash (Parallel, Asynchronous) NOR Flash - Parallel, Asynchronous
Density 16 Mbit (16777 kbits) 16777 kbits (16 Mbit)
Organisasi 1M x 16 / 2M x 8 1 M x 16 / 2 M x 8
Number of Words 1000 k 1000 k
Bits per Word 16 bits 16 bits
Access Time 55 ns 55 ns
Supply Voltage (VCC) 5 V (operating 4.5 V) 5 V
Antarmuka Parallel Parallel
Synchronous / Asynchronous Asynchronous —
Boot Block Location Top boot block (FT) —
Suhu Kerja -40C to +125C -40 C to +125 C
Paket 48-Pin TSOP 48-TSOP I
Tipe Mounting Surface Mount Surface Mount
Packaging Tape & Reel Tray
Program / Erase Embedded byte/word program algorithms (controller on-chip) —
Status RoHS [DATA_NEEDED: RoHS status] ROHS3 Compliant
Level MSL [DATA_NEEDED: moisture sensitivity level] —
Boot Block — Bottom Boot Block (FB)
Programming Algorithm — Embedded byte/word program and erase controller
Lead Free Status — Lead Free

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