M29F160FT55N3F2 vs M29F160FB55N3E2 比較

詳細並排比較 M29F160FT55N3F2 由 Micron Technology 與 M29F160FB55N3E2 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Micron Technology
M29F160FT55N3F2 M29F160FT55N3F2 - 16Mbit 5V 55ns NOR Flash | Micron Technology

M29F160FT55N3F2 - 16Mbit 5V 55ns NOR Flash | Micron Technology

M29F160FT55N3F2 ✓ 啟用中
Micron Technology
M29F160FB55N3E2 M29F160FB55N3E2 - 16Mbit 55ns 5V NOR Flash | Micron

M29F160FB55N3E2 - 16Mbit 55ns 5V NOR Flash | Micron

M29F160FB55N3E2 ✓ 啟用中

規格比較

參數 M29F160FT55N3F2 M29F160FB55N3E2
品牌 Micron Technology Micron Technology
類別 Flash Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 NOR Flash (Parallel, Asynchronous) NOR Flash - Parallel, Asynchronous
Density 16 Mbit (16777 kbits) 16777 kbits (16 Mbit)
組織 1M x 16 / 2M x 8 1 M x 16 / 2 M x 8
Number of Words 1000 k 1000 k
Bits per Word 16 bits 16 bits
Access Time 55 ns 55 ns
Supply Voltage (VCC) 5 V (operating 4.5 V) 5 V
介面 Parallel Parallel
Synchronous / Asynchronous Asynchronous —
Boot Block Location Top boot block (FT) —
工作溫度 -40C to +125C -40 C to +125 C
封裝 48-Pin TSOP 48-TSOP I
安裝類型 Surface Mount Surface Mount
Packaging Tape & Reel Tray
Program / Erase Embedded byte/word program algorithms (controller on-chip) —
RoHS 狀態 [DATA_NEEDED: RoHS status] ROHS3 Compliant
MSL 等級 [DATA_NEEDED: moisture sensitivity level] —
Boot Block — Bottom Boot Block (FB)
Programming Algorithm — Embedded byte/word program and erase controller
Lead Free Status — Lead Free

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