M29F800FB55M3F2 vs M29F800FT55M3E2 Perbandingan

Perbandingan bersamaan detil M29F800FB55M3F2 dari Micron Technology dan M29F800FT55M3E2 dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Micron Technology
M29F800FB55M3F2 M29F800FB55M3F2 - 8Mbit 5V 55ns NOR Flash SO44 | Micron

M29F800FB55M3F2 - 8Mbit 5V 55ns NOR Flash SO44 | Micron

M29F800FB55M3F2 ✓ Aktif
Micron Technology
M29F800FT55M3E2 M29F800FT55M3E2 - 8Mbit 55ns 5V Parallel NOR Flash | Micron

M29F800FT55M3E2 - 8Mbit 55ns 5V Parallel NOR Flash | Micron

M29F800FT55M3E2 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum M29F800FB55M3F2 M29F800FT55M3E2
Merek Micron Technology Micron Technology
Kategori Memory ICs EEPROM
Status Lingkungan Hidup Aktif Aktif
Tipe Memori NOR Flash, Parallel NOR Flash
Density 8389 kbits (8 Mbit) 8389 kbits
Organisasi 512K x 16-bit / 1M x 8-bit 512K x 16 bit
Number of Words 512 k —
Bits per Word 16 bits —
Access Time 55 ns 55 ns
Supply Voltage (VCC) 5 V —
Boot Block Type Bottom Boot Block —
Antarmuka Parallel, Asynchronous Parallel
Programming Embedded byte/word program algorithms —
OTP Area 64 byte —
Suhu Kerja -40C to +125C -40C to +125C
Automotive Qualification Auto Grade 3 (temperature grade 3, +125C) —
Paket 44-pin SO (SOIC-44) 44-SO (SOP)
Tipe Mounting Surface Mount Surface Mount
Packing Tape & Reel (T/R) —
Status RoHS [DATA_NEEDED: RoHS status] Compliant (E suffix)
Endurance [DATA_NEEDED: program/erase endurance cycles] —
Ukuran Memori — 8 Mbit
Tegangan Pemuat — 5 V
Boot Block Location — Top boot block
Program/Erase Cycles — 100,000 per block
Program Algorithm — Embedded byte/word program
Erase Features — Erase suspend and resume
Standby Mode — Automatic standby, low power
Identification — Electronic signature

Spek dan Sumber

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