M29F800FT55M3F2 vs M29F800FT55N3F2 Perbandingan
Perbandingan bersamaan detil M29F800FT55M3F2 dari Micron Technology dan M29F800FT55N3F2 dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Micron Technology
M29F800FT55M3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron
M29F800FT55M3F2 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | M29F800FT55M3F2 | M29F800FT55N3F2 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | Parallel NOR Flash | NOR Flash, Parallel |
| Density | 8 Mbit (8389 kbits) | — |
| Organisasi | 512K x 16 / 1M x 8 | 1M x 8 bit / 512K x 16 bit |
| Access Time | 55 ns | 55 ns |
| Supply Voltage (VCC) | 5 V | — |
| Boot Block Position | Top boot block | — |
| Programming Interface | Embedded program/erase controller | — |
| Suhu Kerja | -40C to +125C | [DATA_NEEDED: operating temperature range] |
| Paket | 44-pin SO (SOP) | 48-pin TSOP |
| Tipe Mounting | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (TR) | Tape & Reel (T/R) |
| Antarmuka | Parallel, x8/x16 selectable | Parallel |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Program/Erase Endurance | [DATA_NEEDED: endurance cycles] | — |
| Status RoHS | Compliant (lead-free suffix F2) | [DATA_NEEDED: RoHS status] |
| Ukuran Memori | — | 8 Mbit |
| Tegangan Pemuat | — | 5 V (single supply) |
| Boot Block Architecture | — | Top boot block (T) |
| Programming Voltage | — | 5.0 V VCC (no 12 V VPP required) |
| Erase Block Size | — | [DATA_NEEDED: block size] |
| Data Retention | — | [DATA_NEEDED: data retention] |
| Program/Erase Cycles | — | [DATA_NEEDED: endurance cycles] |
| Active Read Current | — | [DATA_NEEDED: ICC read] |