M29F800FT55M3F2 vs M29F800FT55N3F2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29F800FT55M3F2 disebabkan oleh Micron Technology dan M29F800FT55N3F2 disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
M29F800FT55M3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron
M29F800FT55M3F2 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | M29F800FT55M3F2 | M29F800FT55N3F2 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | Parallel NOR Flash | NOR Flash, Parallel |
| Density | 8 Mbit (8389 kbits) | — |
| Organisasi | 512K x 16 / 1M x 8 | 1M x 8 bit / 512K x 16 bit |
| Access Time | 55 ns | 55 ns |
| Supply Voltage (VCC) | 5 V | — |
| Boot Block Position | Top boot block | — |
| Programming Interface | Embedded program/erase controller | — |
| Suhu Operasi | -40C to +125C | [DATA_NEEDED: operating temperature range] |
| Kemasan | 44-pin SO (SOP) | 48-pin TSOP |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (TR) | Tape & Reel (T/R) |
| Antaramuka | Parallel, x8/x16 selectable | Parallel |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Program/Erase Endurance | [DATA_NEEDED: endurance cycles] | — |
| Status RoHS | Compliant (lead-free suffix F2) | [DATA_NEEDED: RoHS status] |
| Saiz Ingatan | — | 8 Mbit |
| Tegangan Pemberi Arus | — | 5 V (single supply) |
| Boot Block Architecture | — | Top boot block (T) |
| Programming Voltage | — | 5.0 V VCC (no 12 V VPP required) |
| Erase Block Size | — | [DATA_NEEDED: block size] |
| Data Retention | — | [DATA_NEEDED: data retention] |
| Program/Erase Cycles | — | [DATA_NEEDED: endurance cycles] |
| Active Read Current | — | [DATA_NEEDED: ICC read] |