M29F800FT55N3F2 vs M29F800FT55M3F2 Perbandingan
Perbandingan bersamaan detil M29F800FT55N3F2 dari Micron Technology dan M29F800FT55M3F2 dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Micron Technology
M29F800FT55M3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron
M29F800FT55M3F2 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | M29F800FT55N3F2 | M29F800FT55M3F2 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | NOR Flash, Parallel | Parallel NOR Flash |
| Ukuran Memori | 8 Mbit | — |
| Organisasi | 1M x 8 bit / 512K x 16 bit | 512K x 16 / 1M x 8 |
| Tegangan Pemuat | 5 V (single supply) | — |
| Access Time | 55 ns | 55 ns |
| Antarmuka | Parallel | Parallel, x8/x16 selectable |
| Boot Block Architecture | Top boot block (T) | — |
| Programming Voltage | 5.0 V VCC (no 12 V VPP required) | — |
| Paket | 48-pin TSOP | 44-pin SO (SOP) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (T/R) | Tape & Reel (TR) |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Erase Block Size | [DATA_NEEDED: block size] | — |
| Data Retention | [DATA_NEEDED: data retention] | — |
| Program/Erase Cycles | [DATA_NEEDED: endurance cycles] | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant (lead-free suffix F2) |
| Active Read Current | [DATA_NEEDED: ICC read] | — |
| Density | — | 8 Mbit (8389 kbits) |
| Supply Voltage (VCC) | — | 5 V |
| Boot Block Position | — | Top boot block |
| Programming Interface | — | Embedded program/erase controller |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Program/Erase Endurance | — | [DATA_NEEDED: endurance cycles] |