M29F800FT55N3F2 vs M29F800FT55M3F2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng M29F800FT55N3F2 sa pamamagitan ng Micron Technology at M29F800FT55M3F2 sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
M29F800FT55M3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron
M29F800FT55M3F2 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | M29F800FT55N3F2 | M29F800FT55M3F2 |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | NOR Flash, Parallel | Parallel NOR Flash |
| Laki ng Memory | 8 Mbit | — |
| Organisasyon | 1M x 8 bit / 512K x 16 bit | 512K x 16 / 1M x 8 |
| Volte ng Pagbibigay | 5 V (single supply) | — |
| Access Time | 55 ns | 55 ns |
| Interface | Parallel | Parallel, x8/x16 selectable |
| Boot Block Architecture | Top boot block (T) | — |
| Programming Voltage | 5.0 V VCC (no 12 V VPP required) | — |
| Packhaging | 48-pin TSOP | 44-pin SO (SOP) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (T/R) | Tape & Reel (TR) |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Erase Block Size | [DATA_NEEDED: block size] | — |
| Data Retention | [DATA_NEEDED: data retention] | — |
| Program/Erase Cycles | [DATA_NEEDED: endurance cycles] | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant (lead-free suffix F2) |
| Active Read Current | [DATA_NEEDED: ICC read] | — |
| Density | — | 8 Mbit (8389 kbits) |
| Supply Voltage (VCC) | — | 5 V |
| Boot Block Position | — | Top boot block |
| Programming Interface | — | Embedded program/erase controller |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Program/Erase Endurance | — | [DATA_NEEDED: endurance cycles] |