M29F800FT55N3F2 vs M29F800FT55M3F2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29F800FT55N3F2 disebabkan oleh Micron Technology dan M29F800FT55M3F2 disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
M29F800FT55M3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron
M29F800FT55M3F2 ✓ AktifPengandingan Spesifikasi
| Parametr | M29F800FT55N3F2 | M29F800FT55M3F2 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | NOR Flash, Parallel | Parallel NOR Flash |
| Saiz Ingatan | 8 Mbit | — |
| Organisasi | 1M x 8 bit / 512K x 16 bit | 512K x 16 / 1M x 8 |
| Tegangan Pemberi Arus | 5 V (single supply) | — |
| Access Time | 55 ns | 55 ns |
| Antaramuka | Parallel | Parallel, x8/x16 selectable |
| Boot Block Architecture | Top boot block (T) | — |
| Programming Voltage | 5.0 V VCC (no 12 V VPP required) | — |
| Kemasan | 48-pin TSOP | 44-pin SO (SOP) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (T/R) | Tape & Reel (TR) |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Erase Block Size | [DATA_NEEDED: block size] | — |
| Data Retention | [DATA_NEEDED: data retention] | — |
| Program/Erase Cycles | [DATA_NEEDED: endurance cycles] | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant (lead-free suffix F2) |
| Active Read Current | [DATA_NEEDED: ICC read] | — |
| Density | — | 8 Mbit (8389 kbits) |
| Supply Voltage (VCC) | — | 5 V |
| Boot Block Position | — | Top boot block |
| Programming Interface | — | Embedded program/erase controller |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Program/Erase Endurance | — | [DATA_NEEDED: endurance cycles] |