M29W064FB70N3E vs M29W064FT70N3E Perbandingan
Perbandingan bersamaan detil M29W064FB70N3E dari Micron Technology dan M29W064FT70N3E dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | M29W064FB70N3E | M29W064FT70N3E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Flash | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | NOR Flash, Parallel | NOR Flash (Parallel) |
| Ukuran Memori | 64 Mbit (8M x 8 / 4M x 16) | — |
| Tegangan Pemuat | 3.0 V to 3.6 V (3V/3.3V) | 2.7 V to 3.6 V |
| Access Time | 70 ns | 70 ns |
| Antarmuka | Parallel, CFI compliant | Parallel, CFI compliant |
| Boot Block | Bottom boot block (FB variant) | — |
| Paket | 48-Pin TSOP | 48-TSOP |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | -40C to +125C | -40C to +85C |
| Organization Switching | Byte/Word selectable via BYTE# pin | — |
| Reset/Power-Down | RP# pin | — |
| Data Protection | Block protection, WP# hardware protection | — |
| Device Signature | Electronic signature for device identification | — |
| Packaging | Tray | — |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS compliance status] |
| Brand Source | Micron Technology / Alliance Memory, Inc. (second source) | — |
| Erase/Program Mode | Word/byte program, block erase, chip erase | — |
| Density | — | 64 Mbit |
| Organisasi | — | 8 Mb x8 or 4 Mb x16 |
| Boot Block Architecture | — | Top boot block (FT) |
| Programming Voltage | — | Single 3 V supply (no separate VPP required) |
| Erase/Program Method | — | Command-set page programming, block erase |
| Product Longevity Program | — | No |
| Program/Erase Cycles | — | [DATA_NEEDED: program/erase endurance cycles] |
| Active Read Current | — | [DATA_NEEDED: active read supply current] |
| Standby Current | — | [DATA_NEEDED: standby current] |