M29W064FB70N3E vs M29W064FT70N3E Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29W064FB70N3E disebabkan oleh Micron Technology dan M29W064FT70N3E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | M29W064FB70N3E | M29W064FT70N3E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Flash | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | NOR Flash, Parallel | NOR Flash (Parallel) |
| Saiz Ingatan | 64 Mbit (8M x 8 / 4M x 16) | — |
| Tegangan Pemberi Arus | 3.0 V to 3.6 V (3V/3.3V) | 2.7 V to 3.6 V |
| Access Time | 70 ns | 70 ns |
| Antaramuka | Parallel, CFI compliant | Parallel, CFI compliant |
| Boot Block | Bottom boot block (FB variant) | — |
| Kemasan | 48-Pin TSOP | 48-TSOP |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | -40C to +125C | -40C to +85C |
| Organization Switching | Byte/Word selectable via BYTE# pin | — |
| Reset/Power-Down | RP# pin | — |
| Data Protection | Block protection, WP# hardware protection | — |
| Device Signature | Electronic signature for device identification | — |
| Packaging | Tray | — |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS compliance status] |
| Brand Source | Micron Technology / Alliance Memory, Inc. (second source) | — |
| Erase/Program Mode | Word/byte program, block erase, chip erase | — |
| Density | — | 64 Mbit |
| Organisasi | — | 8 Mb x8 or 4 Mb x16 |
| Boot Block Architecture | — | Top boot block (FT) |
| Programming Voltage | — | Single 3 V supply (no separate VPP required) |
| Erase/Program Method | — | Command-set page programming, block erase |
| Product Longevity Program | — | No |
| Program/Erase Cycles | — | [DATA_NEEDED: program/erase endurance cycles] |
| Active Read Current | — | [DATA_NEEDED: active read supply current] |
| Standby Current | — | [DATA_NEEDED: standby current] |