M29W064FB70N3E vs M29W064FT70N3E 比較
詳細並排比較 M29W064FB70N3E 由 Micron Technology 與 M29W064FT70N3E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | M29W064FB70N3E | M29W064FT70N3E |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Flash | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | NOR Flash, Parallel | NOR Flash (Parallel) |
| 記憶體容量 | 64 Mbit (8M x 8 / 4M x 16) | — |
| 供應電壓 | 3.0 V to 3.6 V (3V/3.3V) | 2.7 V to 3.6 V |
| Access Time | 70 ns | 70 ns |
| 介面 | Parallel, CFI compliant | Parallel, CFI compliant |
| Boot Block | Bottom boot block (FB variant) | — |
| 封裝 | 48-Pin TSOP | 48-TSOP |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | -40C to +125C | -40C to +85C |
| Organization Switching | Byte/Word selectable via BYTE# pin | — |
| Reset/Power-Down | RP# pin | — |
| Data Protection | Block protection, WP# hardware protection | — |
| Device Signature | Electronic signature for device identification | — |
| Packaging | Tray | — |
| RoHS 狀態 | Compliant | [DATA_NEEDED: RoHS compliance status] |
| Brand Source | Micron Technology / Alliance Memory, Inc. (second source) | — |
| Erase/Program Mode | Word/byte program, block erase, chip erase | — |
| Density | — | 64 Mbit |
| 組織 | — | 8 Mb x8 or 4 Mb x16 |
| Boot Block Architecture | — | Top boot block (FT) |
| Programming Voltage | — | Single 3 V supply (no separate VPP required) |
| Erase/Program Method | — | Command-set page programming, block erase |
| Product Longevity Program | — | No |
| Program/Erase Cycles | — | [DATA_NEEDED: program/erase endurance cycles] |
| Active Read Current | — | [DATA_NEEDED: active read supply current] |
| Standby Current | — | [DATA_NEEDED: standby current] |