M29W064FB70N3E vs M29W064FT70N3E Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng M29W064FB70N3E sa pamamagitan ng Micron Technology at M29W064FT70N3E sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
M29W064FB70N3E - 64Mbit 3V NOR Flash 70ns TSOP-48 | Micron
M29W064FB70N3E ✓ NakahandaMicron Technology
M29W064FT70N3E - 64Mb 3V Parallel NOR Flash 70ns | Micron
M29W064FT70N3E ✓ NakahandaPagsanggunian na paghahambing
| Parametro | M29W064FB70N3E | M29W064FT70N3E |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Kategorya | Flash | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | NOR Flash, Parallel | NOR Flash (Parallel) |
| Laki ng Memory | 64 Mbit (8M x 8 / 4M x 16) | — |
| Volte ng Pagbibigay | 3.0 V to 3.6 V (3V/3.3V) | 2.7 V to 3.6 V |
| Access Time | 70 ns | 70 ns |
| Interface | Parallel, CFI compliant | Parallel, CFI compliant |
| Boot Block | Bottom boot block (FB variant) | — |
| Packhaging | 48-Pin TSOP | 48-TSOP |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | -40C to +125C | -40C to +85C |
| Organization Switching | Byte/Word selectable via BYTE# pin | — |
| Reset/Power-Down | RP# pin | — |
| Data Protection | Block protection, WP# hardware protection | — |
| Device Signature | Electronic signature for device identification | — |
| Packaging | Tray | — |
| Tindminan RoHS | Compliant | [DATA_NEEDED: RoHS compliance status] |
| Brand Source | Micron Technology / Alliance Memory, Inc. (second source) | — |
| Erase/Program Mode | Word/byte program, block erase, chip erase | — |
| Density | — | 64 Mbit |
| Organisasyon | — | 8 Mb x8 or 4 Mb x16 |
| Boot Block Architecture | — | Top boot block (FT) |
| Programming Voltage | — | Single 3 V supply (no separate VPP required) |
| Erase/Program Method | — | Command-set page programming, block erase |
| Product Longevity Program | — | No |
| Program/Erase Cycles | — | [DATA_NEEDED: program/erase endurance cycles] |
| Active Read Current | — | [DATA_NEEDED: active read supply current] |
| Standby Current | — | [DATA_NEEDED: standby current] |