M29W128GL70N3E vs M29W064FT70N3E Perbandingan
Perbandingan bersamaan detil M29W128GL70N3E dari Micron Technology dan M29W064FT70N3E dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | M29W128GL70N3E | M29W064FT70N3E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Flash | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | NOR Flash (Parallel) | NOR Flash (Parallel) |
| Density | 128 Mbit | 64 Mbit |
| Organisasi | 16M x8 / 8M x16 | 8 Mb x8 or 4 Mb x16 |
| Access Time | 70 ns | 70 ns |
| Tegangan Pemuat | 2.7 V to 3.6 V (3V/3.3V class) | 2.7 V to 3.6 V |
| Antarmuka | Parallel | Parallel, CFI compliant |
| Boot Block Configuration | Bottom boot (GL suffix) | — |
| Suhu Kerja | -40C to +125C | -40C to +85C |
| Paket | 56-pin TSOP | 48-TSOP |
| Tipe Mounting | Surface Mount | Surface Mount |
| Packaging | Tray | — |
| Automotive Qualification | Automotive grade ordering code (N3E) | — |
| Bus Width Mode | Software-selectable x8/x16 (BYTE# pin) | — |
| Standby Current | [DATA_NEEDED: standby current] | [DATA_NEEDED: standby current] |
| Program/Erase Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS compliance status] |
| Boot Block Architecture | — | Top boot block (FT) |
| Programming Voltage | — | Single 3 V supply (no separate VPP required) |
| Erase/Program Method | — | Command-set page programming, block erase |
| Product Longevity Program | — | No |
| Program/Erase Cycles | — | [DATA_NEEDED: program/erase endurance cycles] |
| Active Read Current | — | [DATA_NEEDED: active read supply current] |