M29W128GL70N3E vs M29W064FT70N3E Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29W128GL70N3E disebabkan oleh Micron Technology dan M29W064FT70N3E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | M29W128GL70N3E | M29W064FT70N3E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Flash | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | NOR Flash (Parallel) | NOR Flash (Parallel) |
| Density | 128 Mbit | 64 Mbit |
| Organisasi | 16M x8 / 8M x16 | 8 Mb x8 or 4 Mb x16 |
| Access Time | 70 ns | 70 ns |
| Tegangan Pemberi Arus | 2.7 V to 3.6 V (3V/3.3V class) | 2.7 V to 3.6 V |
| Antaramuka | Parallel | Parallel, CFI compliant |
| Boot Block Configuration | Bottom boot (GL suffix) | — |
| Suhu Operasi | -40C to +125C | -40C to +85C |
| Kemasan | 56-pin TSOP | 48-TSOP |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Packaging | Tray | — |
| Automotive Qualification | Automotive grade ordering code (N3E) | — |
| Bus Width Mode | Software-selectable x8/x16 (BYTE# pin) | — |
| Standby Current | [DATA_NEEDED: standby current] | [DATA_NEEDED: standby current] |
| Program/Erase Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS compliance status] |
| Boot Block Architecture | — | Top boot block (FT) |
| Programming Voltage | — | Single 3 V supply (no separate VPP required) |
| Erase/Program Method | — | Command-set page programming, block erase |
| Product Longevity Program | — | No |
| Program/Erase Cycles | — | [DATA_NEEDED: program/erase endurance cycles] |
| Active Read Current | — | [DATA_NEEDED: active read supply current] |