M29W160EB70N3E vs M29DW323DB70N3E Perbandingan
Perbandingan bersamaan detil M29W160EB70N3E dari Micron Technology dan M29DW323DB70N3E dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | M29W160EB70N3E | M29DW323DB70N3E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | FLASH - NOR | Flash - NOR |
| Ukuran Memori | 16 Mbit (2M x8, 1M x16) | — |
| Organisasi | 2M x8 / 1M x16 | — |
| Access Time | 70 ns | 70 ns |
| Antarmuka | Parallel | Parallel |
| Supply Voltage (VCC) | 2.7 V to 3.6 V | — |
| Programming Time | 10 us (typical) | — |
| Cell Type | SLC NOR | — |
| Suhu Kerja | -40C to +125C | -40C to +125C |
| Paket / Case | 48-TFSOP (0.724 in, 18.40 mm width) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Packaging | Tray | — |
| Speed Grade | -70 | — |
| FBGA Code | N/A (TSOP package) | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Level MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Memory Format | — | FLASH |
| Technology | — | FLASH - NOR Memory IC |
| Density | — | 32 Mb (4M x 8, 2M x 16) |
| Memory Organization | — | 4M x 8 / 2M x 16 |
| Tegangan Pemuat | — | 3 V class (per manufacturer datasheet) |
| Paket | — | 48-TSOP I |
| Boot Block Location | — | Bottom (DB variant) |
| Byte/Word Organization Select | — | Yes (BYTE pin) |
| Applications Domain | — | Embedded code storage / XIP |
| Standard Pack Quantity | — | [DATA_NEEDED: standard pack quantity] |