M29W160EB70N3E vs M29DW323DB70N3E Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29W160EB70N3E disebabkan oleh Micron Technology dan M29DW323DB70N3E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | M29W160EB70N3E | M29DW323DB70N3E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | FLASH - NOR | Flash - NOR |
| Saiz Ingatan | 16 Mbit (2M x8, 1M x16) | — |
| Organisasi | 2M x8 / 1M x16 | — |
| Access Time | 70 ns | 70 ns |
| Antaramuka | Parallel | Parallel |
| Supply Voltage (VCC) | 2.7 V to 3.6 V | — |
| Programming Time | 10 us (typical) | — |
| Cell Type | SLC NOR | — |
| Suhu Operasi | -40C to +125C | -40C to +125C |
| Kemasan / Case | 48-TFSOP (0.724 in, 18.40 mm width) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Packaging | Tray | — |
| Speed Grade | -70 | — |
| FBGA Code | N/A (TSOP package) | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Aras MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Memory Format | — | FLASH |
| Technology | — | FLASH - NOR Memory IC |
| Density | — | 32 Mb (4M x 8, 2M x 16) |
| Memory Organization | — | 4M x 8 / 2M x 16 |
| Tegangan Pemberi Arus | — | 3 V class (per manufacturer datasheet) |
| Kemasan | — | 48-TSOP I |
| Boot Block Location | — | Bottom (DB variant) |
| Byte/Word Organization Select | — | Yes (BYTE pin) |
| Applications Domain | — | Embedded code storage / XIP |
| Standard Pack Quantity | — | [DATA_NEEDED: standard pack quantity] |