M29W160EB70N3E vs M29DW323DB70N3E 比較
詳細並排比較 M29W160EB70N3E 由 Micron Technology 與 M29DW323DB70N3E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | M29W160EB70N3E | M29DW323DB70N3E |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | FLASH - NOR | Flash - NOR |
| 記憶體容量 | 16 Mbit (2M x8, 1M x16) | — |
| 組織 | 2M x8 / 1M x16 | — |
| Access Time | 70 ns | 70 ns |
| 介面 | Parallel | Parallel |
| Supply Voltage (VCC) | 2.7 V to 3.6 V | — |
| Programming Time | 10 us (typical) | — |
| Cell Type | SLC NOR | — |
| 工作溫度 | -40C to +125C | -40C to +125C |
| 封裝 / 外殼 | 48-TFSOP (0.724 in, 18.40 mm width) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Packaging | Tray | — |
| Speed Grade | -70 | — |
| FBGA Code | N/A (TSOP package) | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| MSL 等級 | [DATA_NEEDED: moisture sensitivity level] | — |
| Memory Format | — | FLASH |
| Technology | — | FLASH - NOR Memory IC |
| Density | — | 32 Mb (4M x 8, 2M x 16) |
| Memory Organization | — | 4M x 8 / 2M x 16 |
| 供應電壓 | — | 3 V class (per manufacturer datasheet) |
| 封裝 | — | 48-TSOP I |
| Boot Block Location | — | Bottom (DB variant) |
| Byte/Word Organization Select | — | Yes (BYTE pin) |
| Applications Domain | — | Embedded code storage / XIP |
| Standard Pack Quantity | — | [DATA_NEEDED: standard pack quantity] |